Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMP2035 [1] |
| Configuration | 2 P-Channel (Dual) Common Drain [1] |
| Current - Continuous Drain (Id) @ 25°C | 6.04A [1] |
| FET Feature | Logic Level Gate [1] |
| Drain to Source Voltage (Vdss) | 20V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 1610pF @ 10V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 15.4nC @ 4.5V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 890mW [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4A, 4.5V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 1V @ 250µA [1] |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) [1] |
Specification references[1]Diodes Incorporated DMP2035UTS-13 vendor product record ↗