DMN67D8LDW-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN67D8LDW-13

MOSFET 2N-CH 60V 0.23A SOT363

FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
230mA
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.82nC @ 10V
Power - Max
320mW
Input Capacitance (Ciss) (Max) @ Vds
22pF @ 25V
FET Feature
Standard
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-TSSOP, SC-88, SOT-363
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN67D8LDW-13 technical parameters
ParameterValue
Base Product NumberDMN67 [1]
Current - Continuous Drain (Id) @ 25°C230mA [1]
Drain to Source Voltage (Vdss)60V [1]
FET FeatureStandard [1]
FET Type2 N-Channel (Dual) [1]
Gate Charge (Qg) (Max) @ Vgs0.82nC @ 10V [1]
Input Capacitance (Ciss) (Max) @ Vds22pF @ 25V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max320mW [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V [1]
Vgs(th) (Max) @ Id2.5V @ 250µA [1]
Package / Case6-TSSOP, SC-88, SOT-363 [1]

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