DMN66D0LDWQ-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN66D0LDWQ-13

MOSFET 2N-CH 60V 0.217A SOT363

Configuration
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
217mA (Ta)
Rds On (Max) @ Id, Vgs
6Ohm @ 115mA, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.9nC @ 10V
Power - Max
400mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds
29.3pF @ 25V
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-TSSOP, SC-88, SOT-363
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN66D0LDWQ-13 technical parameters
ParameterValue
Base Product NumberDMN66 [1]
Configuration2 N-Channel (Dual) [1]
Current - Continuous Drain (Id) @ 25°C217mA (Ta) [1]
Drain to Source Voltage (Vdss)60V [1]
Input Capacitance (Ciss) (Max) @ Vds29.3pF @ 25V [1]
Gate Charge (Qg) (Max) @ Vgs0.9nC @ 10V [1]
MfrDiodes Incorporated [1]
GradeAutomotive [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max400mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs6Ohm @ 115mA, 5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id2V @ 250µA [1]
QualificationAEC-Q101 [1]
Package / Case6-TSSOP, SC-88, SOT-363 [1]

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