Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMN61 [1] |
| Configuration | 2 N-Channel (Dual) [1] |
| Current - Continuous Drain (Id) @ 25°C | 630mA [1] |
| FET Feature | Logic Level Gate [1] |
| Drain to Source Voltage (Vdss) | 60V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 12.9pF @ 12V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 0.74nC @ 5V [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Manufacturer | Diodes Incorporated [1] |
| Power - Max | 820mW [1] |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 150mA, 5V [1] |
| Part Status | Active [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 2V @ 1mA [1] |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 [1] |
Specification references[1]Diodes Incorporated DMN61D8LVTQ-13 vendor product record ↗
