DMN61D8LVT-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN61D8LVT-13

MOSFET 2N-CH 60V 0.63A TSOT26

Configuration
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
630mA
Rds On (Max) @ Id, Vgs
1.8Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.74nC @ 5V
Power - Max
820mW
Input Capacitance (Ciss) (Max) @ Vds
12.9pF @ 12V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseSOT-23-6 Thin, TSOT-23-6
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

DMN61D8LVT-13 technical parameters
ParameterValue
Base Product NumberDMN61 [1]
Configuration2 N-Channel (Dual) [1]
Current - Continuous Drain (Id) @ 25°C630mA [1]
FET FeatureLogic Level Gate [1]
Drain to Source Voltage (Vdss)60V [1]
Input Capacitance (Ciss) (Max) @ Vds12.9pF @ 12V [1]
Gate Charge (Qg) (Max) @ Vgs0.74nC @ 5V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max820mW [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs1.8Ohm @ 150mA, 5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id2V @ 1mA [1]
Package / CaseSOT-23-6 Thin, TSOT-23-6 [1]

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