Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMN6070 [1] |
| Configuration | 2 N-Channel (Dual) [1] |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) [1] |
| Drain to Source Voltage (Vdss) | 60V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 588pF @ 30V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 12.3nC @ 10V [1] |
| Mfr | Diodes Incorporated [1] |
| Grade | Automotive [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 1.2W (Ta) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 4.5A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 3V @ 250µA [1] |
| Qualification | AEC-Q101 [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) [1] |
Specification references[1]Diodes Incorporated DMN6070SSDQ-13 vendor product record ↗