DMN53D0LDWQ-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN53D0LDWQ-13

MOSFET BVDSS: 41V~60V SOT363 T&R

FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
50V
Current - Continuous Drain (Id) @ 25°C
460mA (Ta)
Rds On (Max) @ Id, Vgs
1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.4nC @ 10V
Power - Max
400mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds
49.5pF @ 25V
FET Feature
Standard
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-TSSOP, SC-88, SOT-363
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN53D0LDWQ-13 technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C460mA (Ta) [1]
Drain to Source Voltage (Vdss)50V [1]
FET FeatureStandard [1]
FET Type2 N-Channel (Dual) [1]
Gate Charge (Qg) (Max) @ Vgs1.4nC @ 10V [1]
Input Capacitance (Ciss) (Max) @ Vds49.5pF @ 25V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max400mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs1.6Ohm @ 500mA, 10V [1]
SeriesAutomotive, AEC-Q101 [1]
Vgs(th) (Max) @ Id1.5V @ 250µA [1]
Package / Case6-TSSOP, SC-88, SOT-363 [1]

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