DMN4020LFDE-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN4020LFDE-13

MOSFET N-CH 40V 8A 6UDFN

FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Rds On (Max) @ Id, Vgs
20mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.1 nC @ 20 V
Power Dissipation (Max)
660mW (Ta)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-PowerUDFN
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN4020LFDE-13 technical parameters
ParameterValue
Base Product NumberDMN4020 [1]
Current - Continuous Drain (Id) @ 25°C8A (Ta) [1]
Drain to Source Voltage (Vdss)40 V [1]
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs19.1 nC @ 20 V [1]
Input Capacitance (Ciss) (Max) @ Vds1060 pF @ 20 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)660mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs20mOhm @ 8A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±20V [1]
Vgs(th) (Max) @ Id2.4V @ 250µA [1]
Package / Case6-PowerUDFN [1]

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