Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMN33 [1] |
| Configuration | 2 N-Channel (Dual) [1] |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) [1] |
| Drain to Source Voltage (Vdss) | 30V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 48pF @ 5V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 1.23nC @ 10V [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Manufacturer | Diodes Incorporated [1] |
| Power - Max | 430mW (Ta) [1] |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 250mA, 10V [1] |
| Part Status | Active [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 1.4V @ 100µA [1] |
| Package / Case | SOT-563, SOT-666 [1] |
Specification references[1]Diodes Incorporated DMN33D9LV-13 vendor product record ↗