DMN32D2LV-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN32D2LV-7

MOSFET 2N-CH 30V 0.4A SOT563

Configuration
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
400mA
Rds On (Max) @ Id, Vgs
1.2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Power - Max
400mW
Input Capacitance (Ciss) (Max) @ Vds
39pF @ 3V
FET Feature
Logic Level Gate
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseSOT-563, SOT-666
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN32D2LV-7 technical parameters
ParameterValue
Base Product NumberDMN32 [1]
Configuration2 N-Channel (Dual) [1]
Current - Continuous Drain (Id) @ 25°C400mA [1]
FET FeatureLogic Level Gate [1]
Drain to Source Voltage (Vdss)30V [1]
Input Capacitance (Ciss) (Max) @ Vds39pF @ 3V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max400mW [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs1.2Ohm @ 100mA, 4V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id1.2V @ 250µA [1]
Package / CaseSOT-563, SOT-666 [1]

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DMN32D2LV-7 Diodes Incorporated Datasheet, Specs and RFQ | MPNHarbor