Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMN32 [1] |
| Configuration | 2 N-Channel (Dual) [1] |
| Current - Continuous Drain (Id) @ 25°C | 680mA (Ta) [1] |
| FET Feature | Standard [1] |
| Drain to Source Voltage (Vdss) | 30V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 44.8pF @ 15V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 0.62nC @ 4.5V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 480mW (Ta) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 100mA, 4V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA [1] |
| Package / Case | SOT-563, SOT-666 [1] |
Specification references[1]Diodes Incorporated DMN32D0LV-7 vendor product record ↗