DMN3061SVTQ-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN3061SVTQ-13

MOSFET 2N-CH 30V 3.4A TSOT26

Configuration
2 N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)
Rds On (Max) @ Id, Vgs
60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.6nC @ 10V
Power - Max
880mW
Input Capacitance (Ciss) (Max) @ Vds
278pF @ 15V
FET Feature
Standard
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseSOT-23-6 Thin, TSOT-23-6
Mounting typeSurface Mount
PackingBulk

Technical parameters

Technical specifications

DMN3061SVTQ-13 technical parameters
ParameterValue
Base Product NumberDMN3061 [1]
Configuration2 N-Channel [1]
Current - Continuous Drain (Id) @ 25°C3.4A (Ta) [1]
FET FeatureStandard [1]
Drain to Source Voltage (Vdss)30V [1]
Input Capacitance (Ciss) (Max) @ Vds278pF @ 15V [1]
Gate Charge (Qg) (Max) @ Vgs6.6nC @ 10V [1]
MfrDiodes Incorporated [1]
GradeAutomotive [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max880mW [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs60mOhm @ 3.1A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id1.8V @ 250µA [1]
QualificationAEC-Q101 [1]
Package / CaseSOT-23-6 Thin, TSOT-23-6 [1]

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