Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) [1] |
| Drain to Source Voltage (Vdss) | 30V [1] |
| FET Type | 2 N-Channel (Dual) [1] |
| Gate Charge (Qg) (Max) @ Vgs | 11.2nC @ 10V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 458pF @ 15V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 810mW (Ta) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3A, 4.5V [1] |
| Series | Automotive, AEC-Q101 [1] |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA [1] |
| Package / Case | 6-UDFN Exposed Pad [1] |
Specification references[1]Diodes Incorporated DMN3055LFDBQ-7 vendor product record ↗
