DMN3015LSD-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN3015LSD-13

MOSFET 2N-CH 30V 8.4A 8SO

FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
8.4A (Ta)
Rds On (Max) @ Id, Vgs
15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25.1nC @ 10V
Power - Max
1.2W
Input Capacitance (Ciss) (Max) @ Vds
1415pF @ 15V
FET Feature
Standard
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

DMN3015LSD-13 technical parameters
ParameterValue
Base Product NumberDMN3015 [1]
Current - Continuous Drain (Id) @ 25°C8.4A (Ta) [1]
Drain to Source Voltage (Vdss)30V [1]
FET FeatureStandard [1]
FET Type2 N-Channel (Dual) [1]
Gate Charge (Qg) (Max) @ Vgs25.1nC @ 10V [1]
Input Capacitance (Ciss) (Max) @ Vds1415pF @ 15V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max1.2W [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs15mOhm @ 12A, 10V [1]
Vgs(th) (Max) @ Id2.5V @ 250µA [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]

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