DMN2991UTQ-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN2991UTQ-7

MOSFET BVDSS: 8V~24V SOT523 T&R

FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)
Rds On (Max) @ Id, Vgs
3Ohm @ 100mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Vgs (Max)
±10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 4.5 V
Power Dissipation (Max)
280mW (Ta)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseSOT-523
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN2991UTQ-7 technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C300mA (Ta) [1]
Drain to Source Voltage (Vdss)20 V [1]
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs0.35 nC @ 4.5 V [1]
Input Capacitance (Ciss) (Max) @ Vds21.5 pF @ 15 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)280mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs3Ohm @ 100mA, 4.5V [1]
SeriesAutomotive, AEC-Q101 [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±10V [1]
Vgs(th) (Max) @ Id1V @ 250µA [1]
Package / CaseSOT-523 [1]

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