DMN2058UW-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN2058UW-7

MOSFET N-CH 20V 3.5A SOT323

FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)
Rds On (Max) @ Id, Vgs
42mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 10V
Vgs (Max)
±12V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 10 V
Power Dissipation (Max)
500mW (Ta)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseSC-70, SOT-323
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

DMN2058UW-7 technical parameters
ParameterValue
Base Product NumberDMN2058 [1]
Current - Continuous Drain (Id) @ 25°C3.5A (Ta) [1]
Drain to Source Voltage (Vdss)20 V [1]
Drive Voltage (Max Rds On, Min Rds On)1.8V, 10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs7.7 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds281 pF @ 10 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)500mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs42mOhm @ 3A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±12V [1]
Vgs(th) (Max) @ Id1.2V @ 250µA [1]
Package / CaseSC-70, SOT-323 [1]

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DMN2058UW-7 Diodes Incorporated Datasheet, Specs and RFQ | MPNHarbor