Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMN2029 [1] |
| Current - Continuous Drain (Id) @ 25°C | 5.8A [1] |
| Drain to Source Voltage (Vdss) | 20V [1] |
| FET Feature | Logic Level Gate [1] |
| FET Type | 2 N-Channel (Dual) [1] |
| Gate Charge (Qg) (Max) @ Vgs | 18.6nC @ 8V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 1171pF @ 10V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 1.2W [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6.5A, 4.5V [1] |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) [1] |
Specification references[1]Diodes Incorporated DMN2029USD-13 vendor product record ↗
