DMN2023UCB4-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN2023UCB4-7

MOSFET 2N-CH X1-WLB1818-4

FET Type
2 N-Channel (Dual) Common Drain
Drain to Source Voltage (Vdss)
24V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)
Vgs(th) (Max) @ Id
1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
37nC @ 4.5V
Power - Max
1.45W
Input Capacitance (Ciss) (Max) @ Vds
3333pF @ 10V
FET Feature
Standard
Operating Temperature
-55°C~150°C(TJ)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case4-XFBGA, WLBGA
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN2023UCB4-7 technical parameters
ParameterValue
Base Product NumberDMN2023 [1]
Current - Continuous Drain (Id) @ 25°C6A (Ta) [1]
Drain to Source Voltage (Vdss)24V [1]
FET FeatureStandard [1]
FET Type2 N-Channel (Dual) Common Drain [1]
Gate Charge (Qg) (Max) @ Vgs37nC @ 4.5V [1]
Input Capacitance (Ciss) (Max) @ Vds3333pF @ 10V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max1.45W [1]
Product StatusActive [1]
SeriesAutomotive, AEC-Q101 [1]
Vgs(th) (Max) @ Id1.3V @ 1mA [1]
Package / Case4-XFBGA, WLBGA [1]

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