DMN2022UNS-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN2022UNS-7

MOSFET 2N-CH 20V 10.7A PWRDI3333

Configuration
2 N-Channel (Dual) Common Drain
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
10.7A (Ta)
Rds On (Max) @ Id, Vgs
10.8mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20.3nC @ 4.5V
Power - Max
1.2W
Input Capacitance (Ciss) (Max) @ Vds
1870pF @ 10V
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-PowerVDFN
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

DMN2022UNS-7 technical parameters
ParameterValue
Base Product NumberDMN2022 [1]
Configuration2 N-Channel (Dual) Common Drain [1]
Current - Continuous Drain (Id) @ 25°C10.7A (Ta) [1]
Drain to Source Voltage (Vdss)20V [1]
Input Capacitance (Ciss) (Max) @ Vds1870pF @ 10V [1]
Gate Charge (Qg) (Max) @ Vgs20.3nC @ 4.5V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max1.2W [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs10.8mOhm @ 4A, 4.5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id1V @ 250µA [1]
Package / Case8-PowerVDFN [1]

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