DMN2016UFX-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN2016UFX-7

MOSFET BVDSS: 8V-24V V-DFN2050-4

FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
24V
Current - Continuous Drain (Id) @ 25°C
9.9A (Ta)
Rds On (Max) @ Id, Vgs
15mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14nC @ 4.5V
Power - Max
1.07W (Ta)
Input Capacitance (Ciss) (Max) @ Vds
950pF @ 10V
FET Feature
Standard
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case4-VFDFN Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN2016UFX-7 technical parameters
ParameterValue
Base Product NumberDMN2016 [1]
Current - Continuous Drain (Id) @ 25°C9.9A (Ta) [1]
Drain to Source Voltage (Vdss)24V [1]
FET FeatureStandard [1]
FET Type2 N-Channel (Dual) [1]
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V [1]
Input Capacitance (Ciss) (Max) @ Vds950pF @ 10V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max1.07W (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs15mOhm @ 6.5A, 4.5V [1]
Vgs(th) (Max) @ Id1.5V @ 250µA [1]
Package / Case4-VFDFN Exposed Pad [1]

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