DMN2014LHAB-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image1 of 2
Exact MPN16 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN2014LHAB-7

MOSFET 2N-CH 20V 9A 6UDFN

Configuration
2 N-Channel (Dual) Common Drain
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
9A
Rds On (Max) @ Id, Vgs
13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Power - Max
800mW
Input Capacitance (Ciss) (Max) @ Vds
1550pF @ 10V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-UFDFN Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

DMN2014LHAB-7 technical parameters
ParameterValue
Base Product NumberDMN2014 [1]
Configuration2 N-Channel (Dual) Common Drain [1]
Current - Continuous Drain (Id) @ 25°C9A [1]
FET FeatureLogic Level Gate [1]
Drain to Source Voltage (Vdss)20V [1]
Input Capacitance (Ciss) (Max) @ Vds1550pF @ 10V [1]
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max800mW [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs13mOhm @ 4A, 4.5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id1.1V @ 250µA [1]
Package / Case6-UFDFN Exposed Pad [1]

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