Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMN2014 [1] |
| Configuration | 2 N-Channel (Dual) [1] |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) [1] |
| Drain to Source Voltage (Vdss) | 20V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 10V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Manufacturer | Diodes Incorporated [1] |
| Power - Max | 800mW (Ta) [1] |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 4A, 4.5V [1] |
| Part Status | Active [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA [1] |
| Package / Case | 6-UFDFN Exposed Pad [1] |
Specification references[1]Diodes Incorporated DMN2014LHAB-13 vendor product record ↗
