DMN2013UFX-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN2013UFX-7

MOSFET 2N-CH 20V 10A 6-DFN

FET Type
2 N-Channel (Dual) Common Drain
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Rds On (Max) @ Id, Vgs
11.5mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
57.4nC @ 8V
Power - Max
2.14W
Input Capacitance (Ciss) (Max) @ Vds
2607pF @ 10V
FET Feature
Standard
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-VFDFN Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN2013UFX-7 technical parameters
ParameterValue
Base Product NumberDMN2013 [1]
Current - Continuous Drain (Id) @ 25°C10A (Ta) [1]
Drain to Source Voltage (Vdss)20V [1]
FET FeatureStandard [1]
FET Type2 N-Channel (Dual) Common Drain [1]
Gate Charge (Qg) (Max) @ Vgs57.4nC @ 8V [1]
Input Capacitance (Ciss) (Max) @ Vds2607pF @ 10V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max2.14W [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs11.5mOhm @ 8.5A, 4.5V [1]
SeriesAutomotive, AEC-Q101 [1]
Vgs(th) (Max) @ Id1.1V @ 250µA [1]
Package / Case6-VFDFN Exposed Pad [1]

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