DMN2013UFDE-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN2013UFDE-7

MOSFET N-CH 20V 10.5A 6UDFN

FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
10.5A (Ta)
Rds On (Max) @ Id, Vgs
11mOhm @ 8.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Vgs (Max)
±8V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25.8 nC @ 8 V
Power Dissipation (Max)
660mW (Ta)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-PowerUDFN
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

DMN2013UFDE-7 technical parameters
ParameterValue
Base Product NumberDMN2013 [1]
Current - Continuous Drain (Id) @ 25°C10.5A (Ta) [1]
Drain to Source Voltage (Vdss)20 V [1]
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs25.8 nC @ 8 V [1]
Input Capacitance (Ciss) (Max) @ Vds2453 pF @ 10 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)660mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs11mOhm @ 8.5A, 4.5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±8V [1]
Vgs(th) (Max) @ Id1.1V @ 250µA [1]
Package / Case6-PowerUDFN [1]

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