DMN10H6D2LFDB-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes2 source documents

Diodes Incorporated · exact orderable part

DMN10H6D2LFDB-7

MOSFET 2N-CH 100V 0.27A 6UDFN

Configuration
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
270mA (Ta)
Rds On (Max) @ Id, Vgs
6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.2nC @ 10V
Power - Max
700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds
41pF @ 50V
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-UDFN Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMN10H6D2LFDB-7 technical parameters
ParameterValue
Base Product NumberDMN10 [2]
Configuration2 N-Channel (Dual) [2]
Current - Continuous Drain (Id) @ 25°C270mA (Ta) [2]
Drain to Source Voltage (Vdss)100V [2]
Input Capacitance (Ciss) (Max) @ Vds41pF @ 50V [2]
Gate Charge (Qg) (Max) @ Vgs1.2nC @ 10V [2]
MfrDiodes Incorporated [2]
Mounting TypeSurface Mount [2]
Operating Temperature-55°C ~ 150°C (TJ) [2]
Power - Max700mW (Ta) [2]
Product StatusActive [2]
Rds On (Max) @ Id, Vgs6Ohm @ 190mA, 10V [2]
TechnologyMOSFET (Metal Oxide) [2]
Vgs(th) (Max) @ Id2V @ 1mA [2]
Package / Case6-UDFN Exposed Pad [2]

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