Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) [2] |
| Drain to Source Voltage (Vdss) | 100 V [2] |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V [2] |
| FET Type | N-Channel [2] |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 10 V [2] |
| Input Capacitance (Ciss) (Max) @ Vds | 366 pF @ 50 V [2] |
| Mfr | Diodes Incorporated [2] |
| Mounting Type | Surface Mount, Wettable Flank [2] |
| Operating Temperature | -55°C~150°C(TJ) [2] |
| Power Dissipation (Max) | 2.4W (Ta), 41W (Tc) [2] |
| Product Status | Active [2] |
| Rds On (Max) @ Id, Vgs | 222mOhm @ 2A, 10V [2] |
| Technology | MOSFET (Metal Oxide) [2] |
| Vgs (Max) | ±20V [2] |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA [2] |
| Package / Case | 8-PowerVDFN [2] |