DMN1019USN-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMN1019USN-7

MOSFET N-CH 12V 9.3A SC59

FET Type
N-Channel
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
9.3A (Ta)
Rds On (Max) @ Id, Vgs
10mOhm @ 9.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 2.5V
Vgs (Max)
±8V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50.6 nC @ 8 V
Power Dissipation (Max)
680mW (Ta)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseTO-236-3, SC-59, SOT-23-3
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

DMN1019USN-7 technical parameters
ParameterValue
Base Product NumberDMN1019 [1]
Current - Continuous Drain (Id) @ 25°C9.3A (Ta) [1]
Drain to Source Voltage (Vdss)12 V [1]
Drive Voltage (Max Rds On, Min Rds On)1.2V, 2.5V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs50.6 nC @ 8 V [1]
Input Capacitance (Ciss) (Max) @ Vds2426 pF @ 10 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)680mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs10mOhm @ 9.7A, 4.5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±8V [1]
Vgs(th) (Max) @ Id800mV @ 250µA [1]
Package / CaseTO-236-3, SC-59, SOT-23-3 [1]

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