Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 3 A [1] |
| Base Product Number | DMJT9435 [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 800mA, 1V [1] |
| Frequency - Transition | 160MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 1.2 W [1] |
| Product Status | Active [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 300mA, 3A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 30 V [1] |
| Package / Case | TO-261-4, TO-261AA [1] |
Specification references[1]Diodes Incorporated DMJT9435-13 vendor product record ↗
