DMHC10H170SFJ-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMHC10H170SFJ-13

MOSFET 2N/2P-CH 100V 2.9A 12VDFN

Configuration
2 N and 2 P-Channel (Full Bridge)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
2.9A, 2.3A
Rds On (Max) @ Id, Vgs
160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.7nC @ 10V
Power - Max
2.1W
Input Capacitance (Ciss) (Max) @ Vds
1167pF @ 25V
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case12-VDFN Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

DMHC10H170SFJ-13 technical parameters
ParameterValue
Base Product NumberDMHC10 [1]
Configuration2 N and 2 P-Channel (Full Bridge) [1]
Current - Continuous Drain (Id) @ 25°C2.9A, 2.3A [1]
Drain to Source Voltage (Vdss)100V [1]
Input Capacitance (Ciss) (Max) @ Vds1167pF @ 25V [1]
Gate Charge (Qg) (Max) @ Vgs9.7nC @ 10V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max2.1W [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs160mOhm @ 5A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id3V @ 250µA [1]
Package / Case12-VDFN Exposed Pad [1]

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