DMG9926UDM-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMG9926UDM-7

MOSFET 2N-CH 20V 4.2A SOT-26

FET Type
2 N-Channel (Dual) Common Drain
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4.2A
Rds On (Max) @ Id, Vgs
28mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3nC @ 4.5V
Power - Max
980mW
Input Capacitance (Ciss) (Max) @ Vds
856pF @ 10V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseSOT-23-6
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

DMG9926UDM-7 technical parameters
ParameterValue
Base Product NumberDMG9926 [1]
Current - Continuous Drain (Id) @ 25°C4.2A [1]
Drain to Source Voltage (Vdss)20V [1]
FET FeatureLogic Level Gate [1]
FET Type2 N-Channel (Dual) Common Drain [1]
Gate Charge (Qg) (Max) @ Vgs8.3nC @ 4.5V [1]
Input Capacitance (Ciss) (Max) @ Vds856pF @ 10V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max980mW [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs28mOhm @ 8.2A, 4.5V [1]
Vgs(th) (Max) @ Id900mV @ 250µA [1]
Package / CaseSOT-23-6 [1]

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