Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMG8601 [1] |
| Configuration | 2 N-Channel (Dual) Common Drain [1] |
| Current - Continuous Drain (Id) @ 25°C | 6.1A [1] |
| FET Feature | Logic Level Gate [1] |
| Drain to Source Voltage (Vdss) | 20V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 143pF @ 10V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 4.5V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 920mW [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 6.5A, 4.5V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 1.05V @ 250µA [1] |
| Package / Case | 8-PowerUDFN [1] |
Specification references[1]Diodes Incorporated DMG8601UFG-7 vendor product record ↗