Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMG7N65 [1] |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 650 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 886 pF @ 50 V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power Dissipation (Max) | 125W (Tc) [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.5A, 10V [1] |
| Series | Automotive, AEC-Q101 [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±30V [1] |
| Vgs(th) (Max) @ Id | 4V @ 250µA [1] |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA [1] |
Specification references[1]Diodes Incorporated DMG7N65SJ3 vendor product record ↗