Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMG6602 [1] |
| Configuration | N and P-Channel [1] |
| Current - Continuous Drain (Id) @ 25°C | 3.4A, 2.8A [1] |
| Drain to Source Voltage (Vdss) | 30V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 840mW [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.1A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA [1] |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 [1] |
Specification references[1]Diodes Incorporated DMG6602SVTQ-7 vendor product record ↗
