Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMG6302 [1] |
| Configuration | 2 P-Channel (Dual) [1] |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) [1] |
| Drain to Source Voltage (Vdss) | 25V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 30.7pF @ 10V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 0.34nC @ 4.5V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 310mW (Ta) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 140mA, 4.5V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA [1] |
| Package / Case | 6-TSSOP, SC-88, SOT-363 [1] |
Specification references[1]Diodes Incorporated DMG6302UDW-13 vendor product record ↗
