Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMG4932LSD [1] |
| Configuration | 2 N-Channel (Dual) [1] |
| Current - Continuous Drain (Id) @ 25°C | 9.5A [1] |
| FET Feature | Logic Level Gate [1] |
| Drain to Source Voltage (Vdss) | 30V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 1932pF @ 15V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 1.19W [1] |
| Product Status | Obsolete [1] |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 9A, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) [1] |
Specification references[1]Diodes Incorporated DMG4932LSD-13 vendor product record ↗