DMG4812SSS-13 representative package visual — not an exact-product photograph
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Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMG4812SSS-13

MOSFET N-CH 30V 8A 8SO

FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Rds On (Max) @ Id, Vgs
15mOhm @ 10.7A, 10V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±12V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18.5 nC @ 10 V
Power Dissipation (Max)
1.54W (Ta)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

DMG4812SSS-13 technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C8A (Ta) [1]
Drain to Source Voltage (Vdss)30 V [1]
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V [1]
FET TypeN-Channel [1]
FET FeatureSchottky Diode (Body) [1]
Gate Charge (Qg) (Max) @ Vgs18.5 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds1849 pF @ 15 V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)1.54W (Ta) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs15mOhm @ 10.7A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±12V [1]
Vgs(th) (Max) @ Id2.3V @ 250µA [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]

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