Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMG1023 [1] |
| Configuration | 2 P-Channel (Dual) [1] |
| Current - Continuous Drain (Id) @ 25°C | 1.03A [1] |
| FET Feature | Logic Level Gate [1] |
| Drain to Source Voltage (Vdss) | 20V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 59.76pF @ 16V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 0.62nC @ 4.5V [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Manufacturer | Diodes Incorporated [1] |
| Power - Max | 530mW [1] |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 430mA, 4.5V [1] |
| Part Status | Active [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 1V @ 250µA [1] |
| Package / Case | SOT-563, SOT-666 [1] |
Specification references[1]Diodes Incorporated DMG1023UV-7 vendor product record ↗