DMG1016UDWQ-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMG1016UDWQ-7

MOSFET N/P-CH 20V 1.066A SOT363

Configuration
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
1.066A (Ta), 845mA (Ta)
Rds On (Max) @ Id, Vgs
450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
736.6nC @ 4.5V, 0.62nC @ 4.5V
Power - Max
330mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds
60.67pF @ 10V, 59.76pF @ 16V
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-TSSOP, SC-88, SOT-363
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMG1016UDWQ-7 technical parameters
ParameterValue
Base Product NumberDMG1016 [1]
ConfigurationN and P-Channel Complementary [1]
Current - Continuous Drain (Id) @ 25°C1.066A (Ta), 845mA (Ta) [1]
Drain to Source Voltage (Vdss)20V [1]
Input Capacitance (Ciss) (Max) @ Vds60.67pF @ 10V, 59.76pF @ 16V [1]
Gate Charge (Qg) (Max) @ Vgs736.6nC @ 4.5V, 0.62nC @ 4.5V [1]
MfrDiodes Incorporated [1]
GradeAutomotive [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max330mW (Ta) [1]
Product StatusNot For New Designs [1]
Rds On (Max) @ Id, Vgs450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id1V @ 250µA [1]
QualificationAEC-Q101 [1]
Package / Case6-TSSOP, SC-88, SOT-363 [1]

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