Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMG1016 [1] |
| Configuration | N and P-Channel Complementary [1] |
| Current - Continuous Drain (Id) @ 25°C | 1.066A (Ta), 845mA (Ta) [1] |
| Drain to Source Voltage (Vdss) | 20V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 60.67pF @ 10V, 59.76pF @ 16V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 736.6nC @ 4.5V, 0.62nC @ 4.5V [1] |
| Mfr | Diodes Incorporated [1] |
| Grade | Automotive [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 330mW (Ta) [1] |
| Product Status | Not For New Designs [1] |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 1V @ 250µA [1] |
| Qualification | AEC-Q101 [1] |
| Package / Case | 6-TSSOP, SC-88, SOT-363 [1] |
Specification references[1]Diodes Incorporated DMG1016UDWQ-7 vendor product record ↗
