Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DMG1012 [1] |
| Current - Continuous Drain (Id) @ 25°C | 630mA (Ta) [1] |
| Drain to Source Voltage (Vdss) | 20 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 0.74 nC @ 4.5 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 60.67 pF @ 16 V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power Dissipation (Max) | 280mW (Ta) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 600mA, 4.5V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±6V [1] |
| Vgs(th) (Max) @ Id | 1V @ 250µA [1] |
| Package / Case | SOT-523 [1] |
Specification references[1]Diodes Incorporated DMG1012T-7 vendor product record ↗