DMC67D8UFDBQ-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMC67D8UFDBQ-7

MOSFET N/P-CH 60V 0.39A 6UDFN

Configuration
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
60V, 20V
Current - Continuous Drain (Id) @ 25°C
390mA (Ta), 2.9A (Ta)
Rds On (Max) @ Id, Vgs
4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id
2.5V @ 250µA, 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.4pC @ 4.5V, 7.3nC @ 4.5V
Power - Max
580mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds
41pF @ 25V, 443pF @ 16V
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-UDFN Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMC67D8UFDBQ-7 technical parameters
ParameterValue
Base Product NumberDMC67 [1]
ConfigurationN and P-Channel Complementary [1]
Current - Continuous Drain (Id) @ 25°C390mA (Ta), 2.9A (Ta) [1]
Drain to Source Voltage (Vdss)60V, 20V [1]
Input Capacitance (Ciss) (Max) @ Vds41pF @ 25V, 443pF @ 16V [1]
Gate Charge (Qg) (Max) @ Vgs0.4pC @ 4.5V, 7.3nC @ 4.5V [1]
MfrDiodes Incorporated [1]
GradeAutomotive [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max580mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id2.5V @ 250µA, 1.25V @ 250µA [1]
QualificationAEC-Q101 [1]
Package / Case6-UDFN Exposed Pad [1]

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