Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Configuration | N and P-Channel Complementary [1] |
| Current - Continuous Drain (Id) @ 25°C | 480mA (Ta), 320mA (Ta) [1] |
| FET Feature | Standard [1] |
| Drain to Source Voltage (Vdss) | 60V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 41pF @ 30V, 40pF @ 25V [1] |
| Gate Charge (Qg) (Max) @ Vgs | 1.04nC @ 10V, 1.1nC @ 10V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 500mW (Ta) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA, 3V @ 250µA [1] |
| Package / Case | SOT-563, SOT-666 [1] |
Specification references[1]Diodes Incorporated DMC62D2SV-13 vendor product record ↗
