DMC6040SSD-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMC6040SSD-13

MOSFET N/P-CH 60V 5.1A/3.1A 8SO

Configuration
N and P-Channel
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
5.1A, 3.1A
Rds On (Max) @ Id, Vgs
40mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20.8nC @ 10V
Power - Max
1.24W
Input Capacitance (Ciss) (Max) @ Vds
1130pF @ 15V, 1030pF @ 30V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

DMC6040SSD-13 technical parameters
ParameterValue
Base Product NumberDMC6040 [1]
ConfigurationN and P-Channel [1]
Current - Continuous Drain (Id) @ 25°C5.1A, 3.1A [1]
FET FeatureLogic Level Gate [1]
Drain to Source Voltage (Vdss)60V [1]
Input Capacitance (Ciss) (Max) @ Vds1130pF @ 15V, 1030pF @ 30V [1]
Gate Charge (Qg) (Max) @ Vgs20.8nC @ 10V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max1.24W [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs40mOhm @ 8A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id3V @ 250µA [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]

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