DMC3060LVT-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMC3060LVT-7

MOSFET BVDSS: 25V-30V TSOT26

FET Type
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs
60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.3nC @ 10V
Power - Max
830mW
Input Capacitance (Ciss) (Max) @ Vds
395pF @ 15V, 324pF @ 15V
FET Feature
Standard
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseSOT-23-6 Thin, TSOT-23-6
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

DMC3060LVT-7 technical parameters
ParameterValue
Base Product NumberDMC3060 [1]
Current - Continuous Drain (Id) @ 25°C3.6A (Ta), 2.8A (Ta) [1]
Drain to Source Voltage (Vdss)30V [1]
FET FeatureStandard [1]
FET TypeN and P-Channel Complementary [1]
Gate Charge (Qg) (Max) @ Vgs11.3nC @ 10V [1]
Input Capacitance (Ciss) (Max) @ Vds395pF @ 15V, 324pF @ 15V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max830mW [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V [1]
Vgs(th) (Max) @ Id1.8V @ 250µA, 2.1V @ 250µA [1]
Package / CaseSOT-23-6 Thin, TSOT-23-6 [1]

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