DMC3016LDV-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMC3016LDV-13

MOSFET N/P-CH 30V 21A PWRDI3333

Configuration
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
21A (Tc), 15A (Tc)
Rds On (Max) @ Id, Vgs
12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.5nC @ 4.5V
Power - Max
900mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds
1184pF @ 15V, 1188pF @ 15V
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-PowerVDFN
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

DMC3016LDV-13 technical parameters
ParameterValue
Base Product NumberDMC3016 [1]
ConfigurationN and P-Channel Complementary [1]
Current - Continuous Drain (Id) @ 25°C21A (Tc), 15A (Tc) [1]
Drain to Source Voltage (Vdss)30V [1]
Input Capacitance (Ciss) (Max) @ Vds1184pF @ 15V, 1188pF @ 15V [1]
Gate Charge (Qg) (Max) @ Vgs9.5nC @ 4.5V [1]
MfrDiodes Incorporated [1]
GradeAutomotive [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max900mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs12mOhm @ 7A, 10V, 25mOhm @ 7A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id2.4V @ 250µA [1]
QualificationAEC-Q101 [1]
Package / Case8-PowerVDFN [1]

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