DMC2053UFDBQ-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMC2053UFDBQ-7

MOSFET N/P-CH 20V 4.6A 6UDFN

Configuration
N and P-Channel
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4.6A (Ta), 3.1A (Ta)
Rds On (Max) @ Id, Vgs
35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.7nC @ 10V, 12.7nC @ 8V
Power - Max
820mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds
369pF @ 10V, 440pF @ 10V
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-UDFN Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMC2053UFDBQ-7 technical parameters
ParameterValue
Base Product NumberDMC2053 [1]
ConfigurationN and P-Channel [1]
Current - Continuous Drain (Id) @ 25°C4.6A (Ta), 3.1A (Ta) [1]
Drain to Source Voltage (Vdss)20V [1]
Input Capacitance (Ciss) (Max) @ Vds369pF @ 10V, 440pF @ 10V [1]
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 10V, 12.7nC @ 8V [1]
MfrDiodes Incorporated [1]
GradeAutomotive [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max820mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id1V @ 250µA [1]
QualificationAEC-Q101 [1]
Package / Case6-UDFN Exposed Pad [1]

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