DMC2025UFDB-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMC2025UFDB-13

MOSFET BVDSS: 8V-24V U-DFN2020-6

FET Type
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs
25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA, 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.3nC @ 10V, 15nC @ 8V
Power - Max
700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds
486pF @ 10V, 642pF @ 10V
FET Feature
Standard
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-UDFN Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMC2025UFDB-13 technical parameters
ParameterValue
Base Product NumberDMC2025 [1]
Current - Continuous Drain (Id) @ 25°C6A (Ta), 3.5A (Ta) [1]
Drain to Source Voltage (Vdss)20V [1]
FET FeatureStandard [1]
FET TypeN and P-Channel Complementary [1]
Gate Charge (Qg) (Max) @ Vgs12.3nC @ 10V, 15nC @ 8V [1]
Input Capacitance (Ciss) (Max) @ Vds486pF @ 10V, 642pF @ 10V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max700mW (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V [1]
Vgs(th) (Max) @ Id1V @ 250µA, 1.4V @ 250µA [1]
Package / Case6-UDFN Exposed Pad [1]

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