DMC10H220LSD-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMC10H220LSD-13

MOSFET N/P-CH 100V 1.7A 8SO

Configuration
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
1.7A (Ta)
Rds On (Max) @ Id, Vgs
220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3nC @ 10V, 17.5nC @ 10V
Power - Max
1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds
340pF @ 50V, 1030pF @ 50V
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMC10H220LSD-13 technical parameters
ParameterValue
Base Product NumberDMC10 [1]
ConfigurationN and P-Channel Complementary [1]
Current - Continuous Drain (Id) @ 25°C1.7A (Ta) [1]
Drain to Source Voltage (Vdss)100V [1]
Input Capacitance (Ciss) (Max) @ Vds340pF @ 50V, 1030pF @ 50V [1]
Gate Charge (Qg) (Max) @ Vgs8.3nC @ 10V, 17.5nC @ 10V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max1W (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id3V @ 250µA [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]

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