DMC1030UFDB-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMC1030UFDB-13

MOSFET N/P-CH 12V 5.1A 6UDFN

Configuration
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
5.1A (Ta), 3.9A (Ta)
Rds On (Max) @ Id, Vgs
34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.2nC @ 4.5V, 13nC @ 4.5V
Power - Max
1.36W (Ta)
Input Capacitance (Ciss) (Max) @ Vds
1003pF @ 6V, 1028pF @ 6V
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-UDFN Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMC1030UFDB-13 technical parameters
ParameterValue
Base Product NumberDMC1030 [1]
ConfigurationN and P-Channel Complementary [1]
Current - Continuous Drain (Id) @ 25°C5.1A (Ta), 3.9A (Ta) [1]
Drain to Source Voltage (Vdss)12V [1]
Input Capacitance (Ciss) (Max) @ Vds1003pF @ 6V, 1028pF @ 6V [1]
Gate Charge (Qg) (Max) @ Vgs12.2nC @ 4.5V, 13nC @ 4.5V [1]
MfrDiodes Incorporated [1]
GradeAutomotive [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max1.36W (Ta) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id1V @ 250µA [1]
QualificationAEC-Q101 [1]
Package / Case6-UDFN Exposed Pad [1]

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