DMC1017UPD-13 representative package visual — not an exact-product photograph
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Exact MPN17 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMC1017UPD-13

MOSFET N/P-CH 12V 13A PWRDI50

Configuration
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 9.4A (Ta)
Rds On (Max) @ Id, Vgs
17mOhm @ 11.8A, 4.5V, 32mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18.6nC @ 4.5V, 23.7nC @ 4.5V
Power - Max
2.3W
Input Capacitance (Ciss) (Max) @ Vds
1787pF @ 6V, 2100pF @ 6V
Technology
MOSFET (Metal Oxide)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-PowerTDFN
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMC1017UPD-13 technical parameters
ParameterValue
Base Product NumberDMC1017 [1]
ConfigurationN and P-Channel Complementary [1]
Current - Continuous Drain (Id) @ 25°C13A (Ta), 9.4A (Ta) [1]
Drain to Source Voltage (Vdss)12V [1]
Input Capacitance (Ciss) (Max) @ Vds1787pF @ 6V, 2100pF @ 6V [1]
Gate Charge (Qg) (Max) @ Vgs18.6nC @ 4.5V, 23.7nC @ 4.5V [1]
MfrDiodes Incorporated [1]
GradeAutomotive [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 150°C (TJ) [1]
Power - Max2.3W [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs17mOhm @ 11.8A, 4.5V, 32mOhm @ 8.9A, 4.5V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id1.5V @ 250µA [1]
QualificationAEC-Q101 [1]
Package / Case8-PowerTDFN [1]

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