Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | DGTD65 [1] |
| Current - Collector (Ic) (Max) | 80 A [1] |
| Current - Collector Pulsed (Icm) | 160 A [1] |
| Gate Charge | 219 nC [1] |
| IGBT Type | Field Stop [1] |
| Input Type | Standard [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -40°C~175°C(TJ) [1] |
| Power - Max | 341 W [1] |
| Product Status | Active [1] |
| Reverse Recovery Time (trr) | 145 ns [1] |
| Switching Energy | 1.15mJ (on), 350µJ (off) [1] |
| Td (on/off) @ 25°C | 58ns/245ns [1] |
| Test Condition | 400V, 40A, 7.9Ohm, 15V [1] |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 650 V [1] |
| Package / Case | TO-247-3 [1] |
Specification references[1]Diodes Incorporated DGTD65T40S1PT vendor product record ↗
